Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Abstract Pure aluminum oxide (Al2O3) and zinc aluminum oxide (Zn x Al1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and a...

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Bibliographic Details
Main Authors: Baojun Yan, Shulin Liu, Yuekun Heng, Yuzhen Yang, Yang Yu, Kaile Wen
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
Atomic layer deposition
X-ray photoelectron spectroscopy
Heterojunction
Microchannel plate
Online Access:http://link.springer.com/article/10.1186/s11671-017-2131-8

Internet

http://link.springer.com/article/10.1186/s11671-017-2131-8

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