Radiation study on the parallel topology of SiC MOSFET and Si IGBT inverter

Radiation study on the parallel topology of SiC MOSFET and Si IGBT inverter

The electromagnetic radiation interference mechanism from multiple noise sources on the parallel topology of SiC MOSFET and Si IGBT Inverter is blurred, which will seriously affect the high reliability application of the structure. In order to solve this problem, a topological radiation EMI predicti...

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Bibliographic Details
Main Authors: Yuxing Dai, Zijie Zheng, Zishun Peng, Wen Hu, Jun Wang, Zhenxing Zhao, Yachao Yang, Yi Yang
Format: Article
Language:English
Published: Elsevier 2023-10-01
Series:Energy Reports
Subjects:
Inverter paralleling
Radiated electromagnetic interference
Circuit radiation model
Field-circuit coupling
Online Access:http://www.sciencedirect.com/science/article/pii/S235248472300865X

Internet

http://www.sciencedirect.com/science/article/pii/S235248472300865X

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