Development of the circuit and layout of elements of an operated field emission silicon microcathodes matrix

Development of the circuit and layout of elements of an operated field emission silicon microcathodes matrix

Examples of device elements for microsystems, developed on local three-dimensional structure are shown. The application area of compact EKV models of the MOS-transistor for calculation of SOI MOS-transistors characteristics has been established. The calculated and experimental output characteristics...

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Bibliographic Details
Main Authors: Druzhinin А. A., Holota V. I., Kogut I. T., Khoverko Ju. M.
Format: Article
Language:English
Published: Politehperiodika 2009-10-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
SOI structure
SOI MOSFETs
test structure
topology
field emission microcathode
control circuit
Online Access:http://www.tkea.com.ua/tkea/2009/5_2009/pdf/06.zip

Internet

http://www.tkea.com.ua/tkea/2009/5_2009/pdf/06.zip

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