A dual P‐layer 4H‐SiC p‐i‐n photodetector for the detection from extreme ultraviolet to ultraviolet‐A
Abstract A dual P‐layer 4H‐SiC p‐i‐n ultraviolet photodetector is proposed and studied. The modeling results of the photoelectric characteristics demonstrate the dual P‐layer structure could effectively reduce the recombination of the photogenerated carriers and separate more electron‐hole pairs nea...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-09-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12953 |