A Low Power Injection-Locked CDR Using 28 nm FDSOI Technology for Burst-Mode Applications

A Low Power Injection-Locked CDR Using 28 nm FDSOI Technology for Burst-Mode Applications

In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using a 28 nm Ultra-Thin Body and Box-Fully Depleted Silicon On Insulator (UTBB-FDSOI) technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors enables the creation of a Quadrature Ring Oscillator (QRO)...

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Bibliographic Details
Main Authors: Yuqing Mao, Yoann Charlon, Yves Leduc, Gilles Jacquemod
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Series:Journal of Low Power Electronics and Applications
Subjects:
Clock and Data Recovery (CDR)
Quadrature Ring Oscillator (QRO)
Injection-Locked Oscillator (ILO)
Injection-Locked Clock and Data Recovery (ILCDR)
burst-mode
FDSOI technology
Online Access:https://www.mdpi.com/2079-9268/14/2/22

Internet

https://www.mdpi.com/2079-9268/14/2/22

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