Features of the longitudinal and transverse tensoresistances of low-resistance n-Si
Features of longitudinal and transverse tensoresistances and the tenso-Hall effect in low-resistance n-Si crystals doped with phosphorus, antimony, and arsenic were studied. The impurity-specific mechanisms which lead to changes in the number of charge carriers (“incomplete ionization” and deactivat...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-12-01
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| Series: | Physics Open |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666032623000364 |