Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF<sub>6</sub>/O<sub>2</sub> Gas Mixture

Formation of Black Silicon in a Process of Plasma Etching with Passivation in a SF<sub>6</sub>/O<sub>2</sub> Gas Mixture

This article discusses a method for forming black silicon using plasma etching at a sample temperature range from −20 °C to +20 °C in a mixture of oxygen and sulfur hexafluoride. The surface morphology of the resulting structures, the autocorrelation function of surface features, and reflectivity we...

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Bibliographic Details
Main Authors: Andrey Miakonkikh, Vitaly Kuzmenko
Format: Article
Language:English
Published: MDPI AG 2024-05-01
Series:Nanomaterials
Subjects:
black silicon
reactive ion etching
plasma etching
passivation
plasma oxidation
anisotropic etching
Online Access:https://www.mdpi.com/2079-4991/14/11/945

Internet

https://www.mdpi.com/2079-4991/14/11/945

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