Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction. The within-channel BTBT is enabled by sharp band-bending...

Full description

Bibliographic Details
Main Authors: Shelly Garg, Sneh Saurabh
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Open Journal of Nanotechnology
Subjects:
Tunnel field-effect transistor
dual material gate
lateral electric field
process-induced variations
subthreshold swing
threshold voltage
Online Access:https://ieeexplore.ieee.org/document/9226440/

Internet

https://ieeexplore.ieee.org/document/9226440/

Similar Items