Erratum: “Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors” [AIP Advances 7, 035321 (2017)]

Bibliographic Details
Main Authors:	Jiadong Yu, Zhibiao Hao, Linsen Li, Lai Wang, Yi Luo, Jian Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2017-12-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5018476

Internet

http://dx.doi.org/10.1063/1.5018476