Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high power switching devices with high voltage ratings in range of 1.7 kV and high operating temperatures. In this paper, the advantages of the 4H-SiC NPN BJTs in terms of switching transients and current gain ov...

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Bibliographic Details
Main Authors: Chengjun Shen, Saeed Jahdi, Juefei Yang, Olayiwola Alatise, Jose Ortiz-Gonzalez, Ruizhu Wu, Phil Mellor
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of the Industrial Electronics Society
Subjects:
Bipolar junction transistor
DC gain
high level injection
silicon carbide
temperature
Online Access:https://ieeexplore.ieee.org/document/9684981/

Internet

https://ieeexplore.ieee.org/document/9684981/

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