Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

Low-Temperature Reduction of Graphene Oxide: Electrical Conductance and Scanning Kelvin Probe Force Microscopy

Abstract Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning Kelvin probe force (SKPFM) microscopy after low-t...

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Bibliographic Details
Main Authors: Oleksandr M. Slobodian, Peter M. Lytvyn, Andrii S. Nikolenko, Victor M. Naseka, Oleg Yu. Khyzhun, Andrey V. Vasin, Stanislav V. Sevostianov, Alexei N. Nazarov
Format: Article
Language:English
Published: SpringerOpen 2018-05-01
Series:Nanoscale Research Letters
Subjects:
Graphene oxide
Reduced graphene oxide
Electrical resistivity
Atomic force microscopy
Scanning Kelvin probe force microscopy
Raman spectroscopy
Online Access:http://link.springer.com/article/10.1186/s11671-018-2536-z

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http://link.springer.com/article/10.1186/s11671-018-2536-z

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