The Performance Enhancement of PMOSFETs and Inverter Chains at Low Temperature and Low Voltage by Removing Plasma-Damaged Layers

The Performance Enhancement of PMOSFETs and Inverter Chains at Low Temperature and Low Voltage by Removing Plasma-Damaged Layers

In this work we report on the improvement in cold temperature characteristics of PMOSFETs and inverter circuits by removing the plasma-damaged layer of the source/drain contacts. We removed the plasma-induced damage on the Si using a simple in situ Si soft treatment technique. We found by transmissi...

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Bibliographic Details
Main Authors: Junhwa Song, Eunsun Lee, Seungho Hong, Jihun Kim, Jeonghoon Oh, Byoungdeog Choi
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Electronics
Subjects:
contact resistance
propagation delay time
plasma-induced damage
DRAM
Online Access:https://www.mdpi.com/2079-9292/11/13/1929

Internet

https://www.mdpi.com/2079-9292/11/13/1929

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