Doherty Power Amplifier for LTE-Advanced Systems

Doherty Power Amplifier for LTE-Advanced Systems

The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in...

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Bibliographic Details
Main Authors: Ahmed M. Abdulkhaleq, Maan A. Yahya, Yasir I. A. Al-Yasir, Naser Ojaroudi Parchin, Neil McEwan, Ashwain Rayit, Raed A. Abd-Alhameed, James Noras
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Technologies
Subjects:
Doherty power amplifier
LTE-Advanced
back-off power
linearity
efficiency
impedance inverter network
Online Access:https://www.mdpi.com/2227-7080/7/3/60

Internet

https://www.mdpi.com/2227-7080/7/3/60

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