Doherty Power Amplifier for LTE-Advanced Systems
The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-08-01
|
| Series: | Technologies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2227-7080/7/3/60 |
| _version_ | 1819037305514491904 |
|---|---|
| author | Ahmed M. Abdulkhaleq Maan A. Yahya Yasir I. A. Al-Yasir Naser Ojaroudi Parchin Neil McEwan Ashwain Rayit Raed A. Abd-Alhameed James Noras |
| author_facet | Ahmed M. Abdulkhaleq Maan A. Yahya Yasir I. A. Al-Yasir Naser Ojaroudi Parchin Neil McEwan Ashwain Rayit Raed A. Abd-Alhameed James Noras |
| author_sort | Ahmed M. Abdulkhaleq |
| collection | DOAJ |
| description | The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3−3.5 GHz. Rogers RO4350B material is used as a substrate material, a back-off of 8 dB was achieved with an average gain of 10 dB. Load-pull data are an important tool for determining the optimum load impedance that the transistor needs to see. Additionally, the measured efficiency was 50% when the designed amplifier was tested by a modulated signal of 8 dB peak-to-average-power ratio when the average output power was 40 dBm. At the same time, the linearity of the designed amplifier was measured and found 31.8 dB which can be improved using a digital pre-distorter. The gain phase measurement can be used as an indicator for compensating the phase difference between the two cells. |
| first_indexed | 2024-12-21T08:19:18Z |
| format | Article |
| id | doaj.art-a5f69453d280408db96dd5524d8bb7e0 |
| institution | Directory Open Access Journal |
| issn | 2227-7080 |
| language | English |
| last_indexed | 2024-12-21T08:19:18Z |
| publishDate | 2019-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Technologies |
| spelling | doaj.art-a5f69453d280408db96dd5524d8bb7e02022-12-21T19:10:29ZengMDPI AGTechnologies2227-70802019-08-01736010.3390/technologies7030060technologies7030060Doherty Power Amplifier for LTE-Advanced SystemsAhmed M. Abdulkhaleq0Maan A. Yahya1Yasir I. A. Al-Yasir2Naser Ojaroudi Parchin3Neil McEwan4Ashwain Rayit5Raed A. Abd-Alhameed6James Noras7SARAS Technology Limited, Leeds LS12 4NQ, UKComputer Systems Department, Ninevah Technical Institute, Northern Technical University, Mosul 41001, IraqSchool of Electrical Engineering and Computer Science, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UKSchool of Electrical Engineering and Computer Science, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UKSARAS Technology Limited, Leeds LS12 4NQ, UKSARAS Technology Limited, Leeds LS12 4NQ, UKSchool of Electrical Engineering and Computer Science, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UKSchool of Electrical Engineering and Computer Science, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UKThe design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3−3.5 GHz. Rogers RO4350B material is used as a substrate material, a back-off of 8 dB was achieved with an average gain of 10 dB. Load-pull data are an important tool for determining the optimum load impedance that the transistor needs to see. Additionally, the measured efficiency was 50% when the designed amplifier was tested by a modulated signal of 8 dB peak-to-average-power ratio when the average output power was 40 dBm. At the same time, the linearity of the designed amplifier was measured and found 31.8 dB which can be improved using a digital pre-distorter. The gain phase measurement can be used as an indicator for compensating the phase difference between the two cells.https://www.mdpi.com/2227-7080/7/3/60Doherty power amplifierLTE-Advancedback-off powerlinearityefficiencyimpedance inverter network |
| spellingShingle | Ahmed M. Abdulkhaleq Maan A. Yahya Yasir I. A. Al-Yasir Naser Ojaroudi Parchin Neil McEwan Ashwain Rayit Raed A. Abd-Alhameed James Noras Doherty Power Amplifier for LTE-Advanced Systems Technologies Doherty power amplifier LTE-Advanced back-off power linearity efficiency impedance inverter network |
| title | Doherty Power Amplifier for LTE-Advanced Systems |
| title_full | Doherty Power Amplifier for LTE-Advanced Systems |
| title_fullStr | Doherty Power Amplifier for LTE-Advanced Systems |
| title_full_unstemmed | Doherty Power Amplifier for LTE-Advanced Systems |
| title_short | Doherty Power Amplifier for LTE-Advanced Systems |
| title_sort | doherty power amplifier for lte advanced systems |
| topic | Doherty power amplifier LTE-Advanced back-off power linearity efficiency impedance inverter network |
| url | https://www.mdpi.com/2227-7080/7/3/60 |
| work_keys_str_mv | AT ahmedmabdulkhaleq dohertypoweramplifierforlteadvancedsystems AT maanayahya dohertypoweramplifierforlteadvancedsystems AT yasiriaalyasir dohertypoweramplifierforlteadvancedsystems AT naserojaroudiparchin dohertypoweramplifierforlteadvancedsystems AT neilmcewan dohertypoweramplifierforlteadvancedsystems AT ashwainrayit dohertypoweramplifierforlteadvancedsystems AT raedaabdalhameed dohertypoweramplifierforlteadvancedsystems AT jamesnoras dohertypoweramplifierforlteadvancedsystems |