First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-insulating behavior. The material quality and surface roughne...

Full description

Bibliographic Details
Main Authors: Swarnav Mukhopadhyay, Surjava Sanyal, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Crystals
Subjects:
N-polar GaN
propane doping
semi-insulating N-polar GaN
C-doped N-polar GaN
growth rate optimization
Online Access:https://www.mdpi.com/2073-4352/13/10/1457

Internet

https://www.mdpi.com/2073-4352/13/10/1457

Similar Items