Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology

This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n<sup>+</sup>/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volu...

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Bibliographic Details
Main Authors: Seyed Saman Kohneh Poushi, Bernhard Goll, Kerstin Schneider-Hornstein, Michael Hofbauer, Horst Zimmermann
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Sensors
Subjects:
CMOS-integrated dot avalanche photodiode
multi-dot APD
radial charge collection
active area enlargement
bandwidth enhancement
Online Access:https://www.mdpi.com/1424-8220/23/7/3403

Internet

https://www.mdpi.com/1424-8220/23/7/3403

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