Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n<sup>+</sup>/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volu...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-03-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/7/3403 |
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| author | Seyed Saman Kohneh Poushi Bernhard Goll Kerstin Schneider-Hornstein Michael Hofbauer Horst Zimmermann |
| author_facet | Seyed Saman Kohneh Poushi Bernhard Goll Kerstin Schneider-Hornstein Michael Hofbauer Horst Zimmermann |
| author_sort | Seyed Saman Kohneh Poushi |
| collection | DOAJ |
| description | This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n<sup>+</sup>/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a small multiplication region. These features result in a large light-sensitive area, high responsivity and bandwidth, and exceptionally low junction capacitance. The active area can be further expanded using a multi-dot structure, which is an array of several cathode/p-well dots with a shared anode. Experimental results show that a 5 × 5 multi-dot APD with an active area of 70 μm × 70 μm achieves a bandwidth of 1.8 GHz, a responsivity of 9.7 A/W, and a capacitance of 27 fF. The structure of the multi-dot APD allows for the design of APDs in various sizes that offer high bandwidth and responsivity as an optical detector for various applications while still maintaining a small capacitance. |
| first_indexed | 2024-03-11T05:26:03Z |
| format | Article |
| id | doaj.art-a6043fa155c44cd48feb0d0e11148c1d |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-11T05:26:03Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-a6043fa155c44cd48feb0d0e11148c1d2023-11-17T17:32:01ZengMDPI AGSensors1424-82202023-03-01237340310.3390/s23073403Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS TechnologySeyed Saman Kohneh Poushi0Bernhard Goll1Kerstin Schneider-Hornstein2Michael Hofbauer3Horst Zimmermann4Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology, 1040 Vienna, AustriaThis paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n<sup>+</sup>/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a small multiplication region. These features result in a large light-sensitive area, high responsivity and bandwidth, and exceptionally low junction capacitance. The active area can be further expanded using a multi-dot structure, which is an array of several cathode/p-well dots with a shared anode. Experimental results show that a 5 × 5 multi-dot APD with an active area of 70 μm × 70 μm achieves a bandwidth of 1.8 GHz, a responsivity of 9.7 A/W, and a capacitance of 27 fF. The structure of the multi-dot APD allows for the design of APDs in various sizes that offer high bandwidth and responsivity as an optical detector for various applications while still maintaining a small capacitance.https://www.mdpi.com/1424-8220/23/7/3403CMOS-integrated dot avalanche photodiodemulti-dot APDradial charge collectionactive area enlargementbandwidth enhancement |
| spellingShingle | Seyed Saman Kohneh Poushi Bernhard Goll Kerstin Schneider-Hornstein Michael Hofbauer Horst Zimmermann Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology Sensors CMOS-integrated dot avalanche photodiode multi-dot APD radial charge collection active area enlargement bandwidth enhancement |
| title | Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology |
| title_full | Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology |
| title_fullStr | Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology |
| title_full_unstemmed | Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology |
| title_short | Area and Bandwidth Enhancement of an n<sup>+</sup>/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology |
| title_sort | area and bandwidth enhancement of an n sup sup p well dot avalanche photodiode in 0 35 μm cmos technology |
| topic | CMOS-integrated dot avalanche photodiode multi-dot APD radial charge collection active area enlargement bandwidth enhancement |
| url | https://www.mdpi.com/1424-8220/23/7/3403 |
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