Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He<sup>+</sup> and H<sub>2</sub><sup>+</sup> Ions

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He<sup>+</sup> and H<sub>2</sub><sup>+</sup> Ions

Silicon carbide (SiC) is a promising material used in the advanced semiconductor industry. Fabricating SiC-on-insulator via H implantation is a good method. He and H co-implantation into Si can efficiently enhance exfoliation efficiency compared to only H implantation. In this study, 6H-SiC single c...

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Bibliographic Details
Main Authors: Guoqiang You, Haipeng Lin, Yanfeng Qu, Jie Hao, Suyuan You, Bingsheng Li
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Materials
Subjects:
silicon carbide
H<sub>2</sub><sup>+</sup> implantation
He<sup>+</sup> implantation
bubbles
microstructure
Online Access:https://www.mdpi.com/1996-1944/15/8/2941

Internet

https://www.mdpi.com/1996-1944/15/8/2941

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