Prediction of Statistical Distribution on Nanosheet FET by Geometrical Variability Using Various Machine Learning Models

Prediction of Statistical Distribution on Nanosheet FET by Geometrical Variability Using Various Machine Learning Models

Due to the aggressive scaling down of logic semiconductors, the difficulty of semiconductor component processes has increased. As the structure of components becomes more complex, the time and cost of processes and simulations have risen. Machine learning is now being used to analyze the electrical...

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Bibliographic Details
Main Authors: Jonghyeon Ha, Sun Jin Kim, Minji Bang, Gyeongyeop Lee, Minki Suh, Minseob Shim, Chong-Eun Kim, Jungsik Kim
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Nanosheet field-effect transistor
prediction
statistical analysis
technology computer-aided design simulation
machine learning
Online Access:https://ieeexplore.ieee.org/document/10310203/

Internet

https://ieeexplore.ieee.org/document/10310203/

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