A system-level method for hardening phase-locked loop to single-event effects
To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed. The phase margin of the PLL is kept at 58.16° due to the rational design and the output clock frequency ranges from 0.8...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac8f87 |
| _version_ | 1797746350787395584 |
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| author | Bin Liang Xinyu Xu Hengzhou Yuan Jianjun Chen Deng Luo Yaqing Chi Hanhan Sun |
| author_facet | Bin Liang Xinyu Xu Hengzhou Yuan Jianjun Chen Deng Luo Yaqing Chi Hanhan Sun |
| author_sort | Bin Liang |
| collection | DOAJ |
| description | To mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed. The phase margin of the PLL is kept at 58.16° due to the rational design and the output clock frequency ranges from 0.8 to 3.2 GHz. The circuit-level simulation results reveal that the sensitive volume of the hardened PLL decreases by 80% ∼ 95%. The novel radiation-hardened PLL circuit was implemented in a 28 nm CMOS technology and irradiated with heavy ions with a linear energy transfer between 1.9 and 65.6 MeV•cm ^2 mg ^−1 . The proposed radiation-hardened PLL shows one order of single-event effects hardness level higher than the conventional PLL. |
| first_indexed | 2024-03-12T15:36:34Z |
| format | Article |
| id | doaj.art-a68d8ffde3464a60b5a3f9c4d48138e1 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:36:34Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-a68d8ffde3464a60b5a3f9c4d48138e12023-08-09T16:13:35ZengIOP PublishingMaterials Research Express2053-15912022-01-019909630110.1088/2053-1591/ac8f87A system-level method for hardening phase-locked loop to single-event effectsBin Liang0Xinyu Xu1Hengzhou Yuan2Jianjun Chen3Deng Luo4Yaqing Chi5Hanhan Sun6https://orcid.org/0000-0002-0653-1385College of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaCollege of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaCollege of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaCollege of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaCollege of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaCollege of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaCollege of Computer, National University of Defense Technology , Changsha 410073, People’s Republic of ChinaTo mitigate the sensitivity of the charge pump in a traditional Phase-Locked Loop(PLL), a single-event-hardened PLL architecture with a proportional and integral path is proposed. The phase margin of the PLL is kept at 58.16° due to the rational design and the output clock frequency ranges from 0.8 to 3.2 GHz. The circuit-level simulation results reveal that the sensitive volume of the hardened PLL decreases by 80% ∼ 95%. The novel radiation-hardened PLL circuit was implemented in a 28 nm CMOS technology and irradiated with heavy ions with a linear energy transfer between 1.9 and 65.6 MeV•cm ^2 mg ^−1 . The proposed radiation-hardened PLL shows one order of single-event effects hardness level higher than the conventional PLL.https://doi.org/10.1088/2053-1591/ac8f87phase-looked loopcharge pumpradiation hardening by designsingle-event effectssystem-level hardening |
| spellingShingle | Bin Liang Xinyu Xu Hengzhou Yuan Jianjun Chen Deng Luo Yaqing Chi Hanhan Sun A system-level method for hardening phase-locked loop to single-event effects Materials Research Express phase-looked loop charge pump radiation hardening by design single-event effects system-level hardening |
| title | A system-level method for hardening phase-locked loop to single-event effects |
| title_full | A system-level method for hardening phase-locked loop to single-event effects |
| title_fullStr | A system-level method for hardening phase-locked loop to single-event effects |
| title_full_unstemmed | A system-level method for hardening phase-locked loop to single-event effects |
| title_short | A system-level method for hardening phase-locked loop to single-event effects |
| title_sort | system level method for hardening phase locked loop to single event effects |
| topic | phase-looked loop charge pump radiation hardening by design single-event effects system-level hardening |
| url | https://doi.org/10.1088/2053-1591/ac8f87 |
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