One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure
This paper presents a one-transistor dynamic random-access memory (1T-DRAM) cell based on a gate-all-around junction-less field-effect transistor (GAA-JLFET) with a Si/SiGe heterostructure for high-density memory applications. The proposed 1T-DRAM achieves the sensing margin using the difference in...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/12/2134 |