Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors

This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobili...

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Bibliographic Details
Main Authors: Liaojun Wan, Fuchao He, Yu Qin, Zhenhua Lin, Jie Su, Jingjing Chang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2018-09-01
Series:Materials
Subjects:
ZnO thin film transistors
solution process
interfacial modification layers
stability
contact potential barrier
Online Access:http://www.mdpi.com/1996-1944/11/9/1761

Internet

http://www.mdpi.com/1996-1944/11/9/1761

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