Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors
This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobili...
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MDPI AG
2018-09-01
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/11/9/1761 |
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| author | Liaojun Wan Fuchao He Yu Qin Zhenhua Lin Jie Su Jingjing Chang Yue Hao |
| author_facet | Liaojun Wan Fuchao He Yu Qin Zhenhua Lin Jie Su Jingjing Chang Yue Hao |
| author_sort | Liaojun Wan |
| collection | DOAJ |
| description | This paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications. |
| first_indexed | 2024-04-12T11:18:08Z |
| format | Article |
| id | doaj.art-a6bf8280b01c49ddaf0c21a6100298f7 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-04-12T11:18:08Z |
| publishDate | 2018-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-a6bf8280b01c49ddaf0c21a6100298f72022-12-22T03:35:27ZengMDPI AGMaterials1996-19442018-09-01119176110.3390/ma11091761ma11091761Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film TransistorsLiaojun Wan0Fuchao He1Yu Qin2Zhenhua Lin3Jie Su4Jingjing Chang5Yue Hao6State Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaState Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaState Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaState Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaState Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaState Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaState Key Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an 710071, ChinaThis paper reports low temperature solution processed ZnO thin film transistors (TFTs), and the effects of interfacial passivation of a 4-chlorobenzoic acid (PCBA) layer on device performance. It was found that the ZnO TFTs with PCBA interfacial modification layers exhibited a higher electron mobility of 4.50 cm2 V−1 s−1 compared to the pristine ZnO TFTs with a charge carrier mobility of 2.70 cm2 V−1 s−1. Moreover, the ZnO TFTs with interfacial modification layers could significantly improve device shelf-life stability and bias stress stability compared to the pristine ZnO TFTs. Most importantly, interfacial modification layers could also decrease the contact potential barrier between the source/drain electrodes and the ZnO films when using high work-function metals such as Ag and Au. These results indicate that high performance TFTs can be obtained with a low temperature solution process with interfacial modification layers, which strongly implies further potential for their applications.http://www.mdpi.com/1996-1944/11/9/1761ZnO thin film transistorssolution processinterfacial modification layersstabilitycontact potential barrier |
| spellingShingle | Liaojun Wan Fuchao He Yu Qin Zhenhua Lin Jie Su Jingjing Chang Yue Hao Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors Materials ZnO thin film transistors solution process interfacial modification layers stability contact potential barrier |
| title | Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors |
| title_full | Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors |
| title_fullStr | Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors |
| title_full_unstemmed | Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors |
| title_short | Effects of Interfacial Passivation on the Electrical Performance, Stability, and Contact Properties of Solution Process Based ZnO Thin Film Transistors |
| title_sort | effects of interfacial passivation on the electrical performance stability and contact properties of solution process based zno thin film transistors |
| topic | ZnO thin film transistors solution process interfacial modification layers stability contact potential barrier |
| url | http://www.mdpi.com/1996-1944/11/9/1761 |
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