Parametric Analysis of CSDG MOSFET With La<sub>2</sub>O<sub>3</sub> Gate Oxide: Based on Electrical Field Estimation
Cylindrical Surrounding Double-Gate (CSDG) MOSFETs have been designed for a suitable CMOS replacement to diminish the power and area tradeoff. With these MOSFETs below <italic>70 nm</italic> node for Semiconductor Industry Association (SIA) roadmap, the CMOS technology has excellent immu...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9632533/ |