Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers

To prevent electron leakage in deep ultraviolet (UV) AlGaN light-emitting diodes (LEDs), Al-rich <i>p</i>-type Al<sub>x</sub>Ga<sub>(1−x)</sub>N electron blocking layer (EBL) has been utilized. However, the conventional EBL can mitigate the electron overflow only...

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Bibliographic Details
Main Authors: Barsha Jain, Ravi Teja Velpula, Moulik Patel, Sharif Md. Sadaf, Hieu Pham Trung Nguyen
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Micromachines
Subjects:
AlGaN light-emitting diodes
electron-blocking layer
positive sheet polarization charges
thermal velocity
graded staircase quantum barriers (GSQBs)
Online Access:https://www.mdpi.com/2072-666X/12/3/334

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https://www.mdpi.com/2072-666X/12/3/334

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