Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

Recently, intriguing physical properties have been unraveled in anisotropic semiconductors in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics—a frontier for...

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Bibliographic Details
Main Authors: Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer, Julien Chaste, César González, Yannick J. Dappe, François Bertran, Patrick Le Fèvre, Marco Pala, Fabrice Oehler, Jean-Christophe Girard, Abdelkarim Ouerghi
Format: Article
Language:English
Published: American Physical Society 2023-09-01
Series:Physical Review Research
Online Access:http://doi.org/10.1103/PhysRevResearch.5.033152

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http://doi.org/10.1103/PhysRevResearch.5.033152

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