High-frequency plasma at atmospheric pressure as a means of deposition of thin films
The main units of the industrial high-frequency generator have been modernized. The design and technical coordination of the plasma torch impedance was developed in order to obtain high-frequency plasma with capacitive coupling for the transmission of electrical energy at atmospheric pressure. The...
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Format: | Article |
Language: | English |
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Zhytomyr Polytechnic State University
2019-12-01
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Series: | Технічна інженерія |
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Online Access: | http://ten.ztu.edu.ua/article/view/186558/186088 |
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author | P.P. Melnychuk V.A. Rudnitskyi |
author_facet | P.P. Melnychuk V.A. Rudnitskyi |
author_sort | P.P. Melnychuk |
collection | DOAJ |
description | The main units of the industrial high-frequency generator have been modernized. The design and
technical coordination of the plasma torch impedance was developed in order to obtain high-frequency
plasma with capacitive coupling for the transmission of electrical energy at atmospheric pressure. The
data on the main elements of the structures of adapted units are given, their functional purpose is
indicated. Special attention is paid to the principles of operation of the modified units of equipment and
their functional relationship when controlling the process of synthesis of films for nanotechnology.
The reasons why nanotechnology is not widespread on the existing high-frequency capacitive
plasmatrons are analyzed. New effects of high-frequency plasma and ways to improve the plasmatron
for deposition of thin films were discovered. A theoretical justification for the effect of working
substance transfer in a plasma channel (cord) of a high-frequency capacitive discharge is found. The
possibility of ignition of a single-electrode high-frequency flare discharge from a plasma of a highfrequency capacitive discharge is experimentally proved. An explanation of the structure of highfrequency flare discharge under these conditions is given. The possibility of using the near-electrode
spot of the torch for the vapor concentration of the working substance and the deposition of the film is
revealed.
The main regularities for the synthesis of nanofilms on the example of zinc and aluminum oxides are
investigated. Pyrolysis is chosen among plasma chemical reactions to prepare a pair of working
substances. Plasma luminescence of high-frequency capacitive discharge is studied for the purpose of
effective plasmochemical reactions in the channel of argon plasma discharge and steam supply of the
working substance to the substrate. Thin layers of Al2O3 and ZnO are synthesized by a new method using
high-frequency argon plasma at atmospheric pressure. |
first_indexed | 2024-12-11T14:53:50Z |
format | Article |
id | doaj.art-a73b32b189f74f899640d1ef7d80344d |
institution | Directory Open Access Journal |
issn | 2706-5847 2707-9619 |
language | English |
last_indexed | 2024-12-11T14:53:50Z |
publishDate | 2019-12-01 |
publisher | Zhytomyr Polytechnic State University |
record_format | Article |
series | Технічна інженерія |
spelling | doaj.art-a73b32b189f74f899640d1ef7d80344d2022-12-22T01:01:22ZengZhytomyr Polytechnic State UniversityТехнічна інженерія2706-58472707-96192019-12-01248364210.26642/ten-2019-2(84)-36-42High-frequency plasma at atmospheric pressure as a means of deposition of thin filmsP.P. Melnychuk0https://orcid.org/0000-0003-0361-756XV.A. Rudnitskyi1State University «Zhytomyr Polytechnic»Korolov Zhytomyr Military InstituteThe main units of the industrial high-frequency generator have been modernized. The design and technical coordination of the plasma torch impedance was developed in order to obtain high-frequency plasma with capacitive coupling for the transmission of electrical energy at atmospheric pressure. The data on the main elements of the structures of adapted units are given, their functional purpose is indicated. Special attention is paid to the principles of operation of the modified units of equipment and their functional relationship when controlling the process of synthesis of films for nanotechnology. The reasons why nanotechnology is not widespread on the existing high-frequency capacitive plasmatrons are analyzed. New effects of high-frequency plasma and ways to improve the plasmatron for deposition of thin films were discovered. A theoretical justification for the effect of working substance transfer in a plasma channel (cord) of a high-frequency capacitive discharge is found. The possibility of ignition of a single-electrode high-frequency flare discharge from a plasma of a highfrequency capacitive discharge is experimentally proved. An explanation of the structure of highfrequency flare discharge under these conditions is given. The possibility of using the near-electrode spot of the torch for the vapor concentration of the working substance and the deposition of the film is revealed. The main regularities for the synthesis of nanofilms on the example of zinc and aluminum oxides are investigated. Pyrolysis is chosen among plasma chemical reactions to prepare a pair of working substances. Plasma luminescence of high-frequency capacitive discharge is studied for the purpose of effective plasmochemical reactions in the channel of argon plasma discharge and steam supply of the working substance to the substrate. Thin layers of Al2O3 and ZnO are synthesized by a new method using high-frequency argon plasma at atmospheric pressure.http://ten.ztu.edu.ua/article/view/186558/186088high-frequency capacitive plasmatronhigh-frequency flare dischargenear-electrode spot of the torchsynthesis of nanofilms |
spellingShingle | P.P. Melnychuk V.A. Rudnitskyi High-frequency plasma at atmospheric pressure as a means of deposition of thin films Технічна інженерія high-frequency capacitive plasmatron high-frequency flare discharge near-electrode spot of the torch synthesis of nanofilms |
title | High-frequency plasma at atmospheric pressure as a means of deposition of thin films |
title_full | High-frequency plasma at atmospheric pressure as a means of deposition of thin films |
title_fullStr | High-frequency plasma at atmospheric pressure as a means of deposition of thin films |
title_full_unstemmed | High-frequency plasma at atmospheric pressure as a means of deposition of thin films |
title_short | High-frequency plasma at atmospheric pressure as a means of deposition of thin films |
title_sort | high frequency plasma at atmospheric pressure as a means of deposition of thin films |
topic | high-frequency capacitive plasmatron high-frequency flare discharge near-electrode spot of the torch synthesis of nanofilms |
url | http://ten.ztu.edu.ua/article/view/186558/186088 |
work_keys_str_mv | AT ppmelnychuk highfrequencyplasmaatatmosphericpressureasameansofdepositionofthinfilms AT varudnitskyi highfrequencyplasmaatatmosphericpressureasameansofdepositionofthinfilms |