Broad luminescence from Zn acceptors in Zn doped β-Ga2O3
Zn-related defects in β-Ga2O3 were studied using photoluminescence (PL) spectroscopy combined with hybrid functional calculations and secondary ion mass spectrometry. We have in-diffused Zn by heat treatments of β-Ga2O3 in Zn vapor to promote the formation of the ZnGaZni complex as the dominating Zn...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0190156 |