Sensitive Planar Microwave Diode on the Base of Ternary Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>As Semiconductor Compound

Sensitive Planar Microwave Diode on the Base of Ternary Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>As Semiconductor Compound

The article presents the results of experimental studies of the dc and high-frequency electrical characteristics of planar microwave diodes that are fabricated on the base of the <i>n</i>-Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>As layer...

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Bibliographic Details
Main Authors: Maksimas Anbinderis, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, Algirdas Sužiedėlis
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Sensors
Subjects:
planar diode
microwave sensor
voltage responsivity
aluminum gallium arsenide
Online Access:https://www.mdpi.com/1424-8220/21/13/4487

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https://www.mdpi.com/1424-8220/21/13/4487

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