Interface Properties of MoS<sub>2</sub> van der Waals Heterojunctions with GaN

Interface Properties of MoS<sub>2</sub> van der Waals Heterojunctions with GaN

The combination of the unique physical properties of molybdenum disulfide (MoS<sub>2</sub>) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectro...

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Bibliographic Details
Main Authors: Salvatore Ethan Panasci, Ioannis Deretzis, Emanuela Schilirò, Antonino La Magna, Fabrizio Roccaforte, Antal Koos, Miklos Nemeth, Béla Pécz, Marco Cannas, Simonpietro Agnello, Filippo Giannazzo
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Nanomaterials
Subjects:
MoS<sub>2</sub>
GaN
interface
DFT
vdW heterostructures
wide-band gap
Online Access:https://www.mdpi.com/2079-4991/14/2/133

Internet

https://www.mdpi.com/2079-4991/14/2/133

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