Investigation of the Temperature Effect on Electrical Characteristics of Al/SiO<sub>2</sub>/n++-Si RRAM Devices
In this work, we investigate the effect of temperature on the electrical characteristics of Al/SiO<sub>2</sub>/n++-Si RRAM devices. We study the electroforming process and show that forming voltage and time-to-breakdown are well described by Weibull distribution. Experimental current–vol...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/13/10/1641 |