Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells
Nickel oxide (NiO1+δ) is a versatile material used in various fields such as optoelectronics, spintronics, electrochemistry, and catalysis which is prepared with a wide range of deposition methods. Herein, for the deposition of NiO1+δ films, the reactive gas flow sputtering (GFS) process using a met...
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2024-04-01
|
| Series: | Advanced Energy & Sustainability Research |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aesr.202300201 |
| _version_ | 1797220351239782400 |
|---|---|
| author | Sri Hari Bharath Vinoth Kumar Ruslan Muydinov Natalia Maticiuc Nivin Alktash Marin Rusu Bertwin Bilgrim Otto Seibertz Hans Köbler Antonio Abate Thomas Unold Iver Lauermann Bernd Szyszka |
| author_facet | Sri Hari Bharath Vinoth Kumar Ruslan Muydinov Natalia Maticiuc Nivin Alktash Marin Rusu Bertwin Bilgrim Otto Seibertz Hans Köbler Antonio Abate Thomas Unold Iver Lauermann Bernd Szyszka |
| author_sort | Sri Hari Bharath Vinoth Kumar |
| collection | DOAJ |
| description | Nickel oxide (NiO1+δ) is a versatile material used in various fields such as optoelectronics, spintronics, electrochemistry, and catalysis which is prepared with a wide range of deposition methods. Herein, for the deposition of NiO1+δ films, the reactive gas flow sputtering (GFS) process using a metallic Ni hollow cathode is developed. This technique is distinct and has numerous advantages compared to conventional sputtering methods. The NiO1+δ films are sputtered at low temperatures (100 ºC) for various oxygen partial pressures during the GFS process. Additionally, Cu‐incorporated NiO1+δ (Cu x Ni1−x O1+δ) films are obtained with 5 and 8 at% Cu. The thin films of NiO1+δ are characterized and evaluated as a hole‐transporting layer (HTL) in perovskite solar cells (PSCs). The NiO1+δ devices are benchmarked against state‐of‐the‐art self‐assembled monolayers (SAM) ([2‐(3,6‐dimethoxy‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (also known as MeO2PACz)‐based PSCs. The best‐performing NiO1+δ PSC achieves an efficiency (η) of ≈16% without a passivation layer at the HTL interface and demonstrates better operational stability compared to the SAM device. The findings suggest that further optimization of GFS NiO1+δ devices can lead to higher‐performing and more stable PSCs. |
| first_indexed | 2024-04-24T12:48:09Z |
| format | Article |
| id | doaj.art-a7930723beee4189b8b353d2c84caec3 |
| institution | Directory Open Access Journal |
| issn | 2699-9412 |
| language | English |
| last_indexed | 2024-04-24T12:48:09Z |
| publishDate | 2024-04-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Energy & Sustainability Research |
| spelling | doaj.art-a7930723beee4189b8b353d2c84caec32024-04-06T12:20:45ZengWiley-VCHAdvanced Energy & Sustainability Research2699-94122024-04-0154n/an/a10.1002/aesr.202300201Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar CellsSri Hari Bharath Vinoth Kumar0Ruslan Muydinov1Natalia Maticiuc2Nivin Alktash3Marin Rusu4Bertwin Bilgrim Otto Seibertz5Hans Köbler6Antonio Abate7Thomas Unold8Iver Lauermann9Bernd Szyszka10Technology for Thin‐Film Devices Institute of High‐Frequency and Semiconductor System Technologies, Faculty IV Technische Universität Berlin Einsteinufer 25 Berlin 10587 GermanyTechnology for Thin‐Film Devices Institute of High‐Frequency and Semiconductor System Technologies, Faculty IV Technische Universität Berlin Einsteinufer 25 Berlin 10587 GermanyCompetence Center Photovoltaics (PVcomB) Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstraße 3 Berlin 12489 GermanyTechnology for Thin‐Film Devices Institute of High‐Frequency and Semiconductor System Technologies, Faculty IV Technische Universität Berlin Einsteinufer 25 Berlin 10587 GermanyDepartment Structure and Dynamics of Energy Materials Helmholtz‐Zentrum Berlin für Materialien und Energie Lise‐Meitner Campus Hahn‐Meitner‐Platz 1 Berlin 14109 GermanyTechnology for Thin‐Film Devices Institute of High‐Frequency and Semiconductor System Technologies, Faculty IV Technische Universität Berlin Einsteinufer 25 Berlin 10587 GermanyDepartment Novel Materials and Interfaces for Photovoltaic Solar Cells Helmholtz‐Zentrum Berlin für Materialien und Energie Kekuléstraße 5 Berlin 12489 GermanyDepartment Novel Materials and Interfaces for Photovoltaic Solar Cells Helmholtz‐Zentrum Berlin für Materialien und Energie Kekuléstraße 5 Berlin 12489 GermanyDepartment Structure and Dynamics of Energy Materials Helmholtz‐Zentrum Berlin für Materialien und Energie Lise‐Meitner Campus Hahn‐Meitner‐Platz 1 Berlin 14109 GermanyCompetence Center Photovoltaics (PVcomB) Helmholtz‐Zentrum Berlin für Materialien und Energie Schwarzschildstraße 3 Berlin 12489 GermanyTechnology for Thin‐Film Devices Institute of High‐Frequency and Semiconductor System Technologies, Faculty IV Technische Universität Berlin Einsteinufer 25 Berlin 10587 GermanyNickel oxide (NiO1+δ) is a versatile material used in various fields such as optoelectronics, spintronics, electrochemistry, and catalysis which is prepared with a wide range of deposition methods. Herein, for the deposition of NiO1+δ films, the reactive gas flow sputtering (GFS) process using a metallic Ni hollow cathode is developed. This technique is distinct and has numerous advantages compared to conventional sputtering methods. The NiO1+δ films are sputtered at low temperatures (100 ºC) for various oxygen partial pressures during the GFS process. Additionally, Cu‐incorporated NiO1+δ (Cu x Ni1−x O1+δ) films are obtained with 5 and 8 at% Cu. The thin films of NiO1+δ are characterized and evaluated as a hole‐transporting layer (HTL) in perovskite solar cells (PSCs). The NiO1+δ devices are benchmarked against state‐of‐the‐art self‐assembled monolayers (SAM) ([2‐(3,6‐dimethoxy‐9H‐carbazol‐9‐yl)ethyl]phosphonic acid (also known as MeO2PACz)‐based PSCs. The best‐performing NiO1+δ PSC achieves an efficiency (η) of ≈16% without a passivation layer at the HTL interface and demonstrates better operational stability compared to the SAM device. The findings suggest that further optimization of GFS NiO1+δ devices can lead to higher‐performing and more stable PSCs.https://doi.org/10.1002/aesr.202300201gas flow sputteringhollow cathodehybrid perovskite solar cellsnickel oxidep‐type transparent conducting oxides (TCO) |
| spellingShingle | Sri Hari Bharath Vinoth Kumar Ruslan Muydinov Natalia Maticiuc Nivin Alktash Marin Rusu Bertwin Bilgrim Otto Seibertz Hans Köbler Antonio Abate Thomas Unold Iver Lauermann Bernd Szyszka Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells Advanced Energy & Sustainability Research gas flow sputtering hollow cathode hybrid perovskite solar cells nickel oxide p‐type transparent conducting oxides (TCO) |
| title | Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells |
| title_full | Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells |
| title_fullStr | Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells |
| title_full_unstemmed | Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells |
| title_short | Hollow Cathode Gas Flow Sputtering of Nickel Oxide Thin Films for Hole‐Transport Layer Application in Perovskite Solar Cells |
| title_sort | hollow cathode gas flow sputtering of nickel oxide thin films for hole transport layer application in perovskite solar cells |
| topic | gas flow sputtering hollow cathode hybrid perovskite solar cells nickel oxide p‐type transparent conducting oxides (TCO) |
| url | https://doi.org/10.1002/aesr.202300201 |
| work_keys_str_mv | AT sriharibharathvinothkumar hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT ruslanmuydinov hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT nataliamaticiuc hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT nivinalktash hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT marinrusu hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT bertwinbilgrimottoseibertz hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT hanskobler hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT antonioabate hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT thomasunold hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT iverlauermann hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells AT berndszyszka hollowcathodegasflowsputteringofnickeloxidethinfilmsforholetransportlayerapplicationinperovskitesolarcells |