Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy

A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in electronics and optoelectronics. However, the single phase of InSe is still a challenge due to the close formation energy of InSe and In2Se3. In this...

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Bibliographic Details
Main Authors: Sheng-Wei Hsiao, Chu-Shou Yang, Hao-Ning Yang, Chia-Hsing Wu, Ssu-Kuan Wu, Li-Yun Chang, Yen-Teng Ho, Shu-Jui Chang, Wu-Ching Chou
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-03-01
Series:Frontiers in Materials
Subjects:
2D materials
indium precursor layer
molecular beam epitaxy
Raman scattering spectrum
x-ray diffraction
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2022.871003/full

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https://www.frontiersin.org/articles/10.3389/fmats.2022.871003/full

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