Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy
A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in electronics and optoelectronics. However, the single phase of InSe is still a challenge due to the close formation energy of InSe and In2Se3. In this...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Frontiers Media S.A.
2022-03-01
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Series: | Frontiers in Materials |
Subjects: | |
Online Access: | https://www.frontiersin.org/articles/10.3389/fmats.2022.871003/full |