Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44
Quaternary AlGaAsSb alloys have exhibited low excess noise characteristics as gain regions in avalanche photodiodes. In this work, optical spectroscopy techniques are used to demonstrate the recombination dynamics in molecular beam epitaxy grown Al0.85Ga0.15As0.56Sb0.44 with temperature variation. P...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-04-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0145051 |