Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44

Quaternary AlGaAsSb alloys have exhibited low excess noise characteristics as gain regions in avalanche photodiodes. In this work, optical spectroscopy techniques are used to demonstrate the recombination dynamics in molecular beam epitaxy grown Al0.85Ga0.15As0.56Sb0.44 with temperature variation. P...

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Bibliographic Details
Main Authors: Shumithira Gandan, Lucas L. G. Pinel, Juan S. D. Morales, Jo Shien Ng, Chee Hing Tan, Tomasz Ochalski
Format: Article
Language:English
Published: AIP Publishing LLC 2023-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0145051