An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT
GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems. The use of circuit models of power devices is essential for the optimal design of power converters, but while they have been deeply in...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-09-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/16/18/6574 |