An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT
GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems. The use of circuit models of power devices is essential for the optimal design of power converters, but while they have been deeply in...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-09-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/16/18/6574 |
| _version_ | 1797580402800459776 |
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| author | Enrico Alfredo Bottaro Santi Agatino Rizzo |
| author_facet | Enrico Alfredo Bottaro Santi Agatino Rizzo |
| author_sort | Enrico Alfredo Bottaro |
| collection | DOAJ |
| description | GaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems. The use of circuit models of power devices is essential for the optimal design of power converters, but while they have been deeply investigated for power MOSFETs and IGBTs, GaN HEMT models are still in their early stages. This paper first discusses the main similarities and differences between conventional MOSFETs and GaN HEMTs in terms of the datasheet information that the device manufacturers use to obtain the behavioral models that they usually provide as Spice-like netlists. Then, it highlights the strengths and weaknesses of using the behavioral models of MOSFET for GaN HEMT. To achieve this aim, a study of the existing GaN HEMT models revealed the lack of a proper modeling strategy for the dynamic conduction resistance, which is the most critical aspect of HEMT modeling. The difficulty is due to the dependence of the dynamic conduction resistance on quantities related to the application, which is a behavior absent in power MOSFETs. Consequently, future research efforts on GaN HEMT modeling must face this issue. |
| first_indexed | 2024-03-10T22:49:30Z |
| format | Article |
| id | doaj.art-a7bf51a6aedb4d0d88bf4278fe8103af |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T22:49:30Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-a7bf51a6aedb4d0d88bf4278fe8103af2023-11-19T10:27:06ZengMDPI AGEnergies1996-10732023-09-011618657410.3390/en16186574An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMTEnrico Alfredo Bottaro0Santi Agatino Rizzo1Department of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, ItalyDepartment of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, ItalyGaN high electron mobility transistors (HEMTs) represent an emerging and key enabling technology for obtaining highly efficient and compact power electronic systems. The use of circuit models of power devices is essential for the optimal design of power converters, but while they have been deeply investigated for power MOSFETs and IGBTs, GaN HEMT models are still in their early stages. This paper first discusses the main similarities and differences between conventional MOSFETs and GaN HEMTs in terms of the datasheet information that the device manufacturers use to obtain the behavioral models that they usually provide as Spice-like netlists. Then, it highlights the strengths and weaknesses of using the behavioral models of MOSFET for GaN HEMT. To achieve this aim, a study of the existing GaN HEMT models revealed the lack of a proper modeling strategy for the dynamic conduction resistance, which is the most critical aspect of HEMT modeling. The difficulty is due to the dependence of the dynamic conduction resistance on quantities related to the application, which is a behavior absent in power MOSFETs. Consequently, future research efforts on GaN HEMT modeling must face this issue.https://www.mdpi.com/1996-1073/16/18/6574circuit modelingcircuit simulationGaNpower electronics deviceSPICE |
| spellingShingle | Enrico Alfredo Bottaro Santi Agatino Rizzo An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT Energies circuit modeling circuit simulation GaN power electronics device SPICE |
| title | An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT |
| title_full | An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT |
| title_fullStr | An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT |
| title_full_unstemmed | An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT |
| title_short | An Overview of Strengths and Weaknesses in Using MOSFET Experience for Modeling GaN HEMT |
| title_sort | overview of strengths and weaknesses in using mosfet experience for modeling gan hemt |
| topic | circuit modeling circuit simulation GaN power electronics device SPICE |
| url | https://www.mdpi.com/1996-1073/16/18/6574 |
| work_keys_str_mv | AT enricoalfredobottaro anoverviewofstrengthsandweaknessesinusingmosfetexperienceformodelingganhemt AT santiagatinorizzo anoverviewofstrengthsandweaknessesinusingmosfetexperienceformodelingganhemt AT enricoalfredobottaro overviewofstrengthsandweaknessesinusingmosfetexperienceformodelingganhemt AT santiagatinorizzo overviewofstrengthsandweaknessesinusingmosfetexperienceformodelingganhemt |