Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique
Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown bythermal oxidation (TO) on clean monocrystalline p-type Si without any post- depositionannealing. From optical transmittance and absorptance data, the direct optical band gapwas found to be 1.4eV. The electrical and p...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2008-10-01
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| Series: | Engineering and Technology Journal |
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| Online Access: | https://etj.uotechnology.edu.iq/article_26851_5ed081ecc6ab4ec6a67433e4e09c9e37.pdf |