Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique

Study Optoelectronic Properties of Ag2O Heterojunction Prepered by Thermal Oxidation Technique

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Highly (101)-oriented p-Ag2O thin film with high electrical resistivily was grown bythermal oxidation (TO) on clean monocrystalline p-type Si without any post- depositionannealing. From optical transmittance and absorptance data, the direct optical band gapwas found to be 1.4eV. The electrical and p...

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Bibliographic Details
Main Author:	Khalid Z. Yahia
Format:	Article
Language:	English
Published:	Unviversity of Technology- Iraq 2008-10-01
Series:	Engineering and Technology Journal
Subjects:	heterojunction thermal oxidation photovoltaic
Online Access:	https://etj.uotechnology.edu.iq/article_26851_5ed081ecc6ab4ec6a67433e4e09c9e37.pdf

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