Structural Characterization of Al<sub>0.37</sub>In<sub>0.63</sub>N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications
Compact Al<sub>0.37</sub>In<sub>0.63</sub>N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission elec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-04-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/14/9/2236 |