Structural Characterization of Al<sub>0.37</sub>In<sub>0.63</sub>N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Structural Characterization of Al<sub>0.37</sub>In<sub>0.63</sub>N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Compact Al<sub>0.37</sub>In<sub>0.63</sub>N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission elec...

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Bibliographic Details
Main Authors: Arántzazu Núñez-Cascajero, Fernando B. Naranjo, María de la Mata, Sergio I. Molina
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
III-nitrides
AlInN
AlN buffer
RF sputtering
TEM
Online Access:https://www.mdpi.com/1996-1944/14/9/2236

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