An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test of CMOS PAs. The experimental results show that the proposed method is effective. The degradatio...

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Bibliographic Details
Main Authors: Shaohua Zhou, Jian Wang
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9580459/