An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test of CMOS PAs. The experimental results show that the proposed method is effective. The degradatio...
Main Authors: | Shaohua Zhou, Jian Wang |
---|---|
Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
|
Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9580459/ |
Similar Items
-
Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test
by: Shaohua Zhou, et al.
Published: (2022-05-01) -
Research progress of millimeter wave CMOS RF power amplifier for 5G applications
by: Peng Lin, et al.
Published: (2019-03-01) -
RF power amplifiers /
by: Kazimierczuk, Marian K
Published: (2008) -
Design and control of RF power amplifiers /
by: 183242 Shirvani, Alireza, et al.
Published: (2003) -
RF power amplifiers for wireless communications /
by: 373889 Cripps, Steve C.
Published: (2006)