Low-temperature homoepitaxial growth of β-Ga2O3 thin films by atmospheric pressure plasma-enhanced chemical vapor deposition technique
Low-temperature homoepitaxial growth of β-Ga2O3(-201) has been successfully demonstrated by the atmospheric pressure plasma-enhanced chemical vapor deposition technique. To search for low-temperature growth, temperature-dependent studies were carried out between 350 and 600 °C. A high N2 gas flow ra...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0178100 |