Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were su...

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Bibliographic Details
Main Authors: Rafał Knura, Katarzyna Skibińska, Sylvester Sahayaraj, Marianna Marciszko-Wiąckowska, Jakub Gwizdak, Marek Wojnicki, Piotr Żabiński, Grzegorz Sapeta, Sylwester Iwanek, Robert P. Socha
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Electronics
Subjects:
thin films
atomic layer deposition
Hall effect
ZnO doped by Ge
ZnO
Ge-doped zinc oxide
Online Access:https://www.mdpi.com/2079-9292/13/3/554

Internet

https://www.mdpi.com/2079-9292/13/3/554

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