Sputter-Deposited-MoS<sub>2</sub> <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula>MISFETs With Top-Gate and Al<sub>2</sub>O<sub>3</sub> Passivation Under Low Thermal Budget for Large Area Integration
We have fabricated large area integrated top-gate <inline-formula> <tex-math notation="LaTeX">${n}$ </tex-math></inline-formula>MISFETs with sputter-deposited-MoS<sub>2</sub> film having n-type operation. A sputtering method enables us to form a large-ar...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8543583/ |