Heterojunction Devices Fabricated from Sprayed <i>n</i>-Type Ga<sub>2</sub>O<sub>3</sub>, Combined with Sputtered <i>p</i>-Type NiO and Cu<sub>2</sub>O

Heterojunction Devices Fabricated from Sprayed <i>n</i>-Type Ga<sub>2</sub>O<sub>3</sub>, Combined with Sputtered <i>p</i>-Type NiO and Cu<sub>2</sub>O

This work reports on the properties of heterojunctions consisting of <i>n</i>-type Ga<sub>2</sub>O<sub>3</sub> layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with <i>p</i>-type NiO and Cu<s...

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Bibliographic Details
Main Authors: Theodoros Dimopoulos, Rachmat Adhi Wibowo, Stefan Edinger, Maximilian Wolf, Thomas Fix
Format: Article
Language:English
Published: MDPI AG 2024-02-01
Series:Nanomaterials
Subjects:
cuprous oxide
gallium oxide
nickel oxide
heterojunctions
sputtering
spray pyrolysis
Online Access:https://www.mdpi.com/2079-4991/14/3/300

Internet

https://www.mdpi.com/2079-4991/14/3/300

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