Effect on Rapid Thermal Oxidation process on Electrical Properties of Porous Silicon
In this work, the porous silicon was prepared by using stain etching in HF-HNO3 atdifferent etching times. Then Rapid Thermal Oxidation (RTO) processes were used forsurface treatment at different temperature and oxidation time to enhancement sampleproperties. Fourier Transforms infrared (FTIR) spect...
| Hlavní autoři: | , , |
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| Médium: | Článek |
| Jazyk: | English |
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Unviversity of Technology- Iraq
2009-03-01
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| Edice: | Engineering and Technology Journal |
| Témata: | |
| On-line přístup: | https://etj.uotechnology.edu.iq/article_29195_cd3b31022ecf9ed4192c244607ca153c.pdf |