Numerical Analysis of Phosphorus Concentration Distribution in a Silicon Crystal during Directional Solidification Process
For bulk doping, boron and phosphorus are usually used as p-type and n-type dopants, respectively. The distribution of these dopant concentrations in a silicon crystal along the vertical direction is governed by the segregation phenomena. As the segregation coefficient of phosphorus is small, phosph...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-12-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/1/27 |