Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors
In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface trap states exist between the channels and the oxide layers, a...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2023-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/10138580/ |