Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors

Effects of Interface States on Electrical Characteristics of Feedback Field-Effect Transistors

In this study, we examine the effect of interface trap states on the electrical characteristics of single-gated feedback field-effect transistors (FBFETs) using a commercially available computer-aided design simulation package. Interface trap states exist between the channels and the oxide layers, a...

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Bibliographic Details
Main Authors: Juhee Jeon, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Positive feedback mechanism
memory
interface state
trap
FBFET
Online Access:https://ieeexplore.ieee.org/document/10138580/

Internet

https://ieeexplore.ieee.org/document/10138580/

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