Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF<sub>6</sub>/O<sub>2</sub>/Ar Capacitively Coupled Plasma

Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF<sub>6</sub>/O<sub>2</sub>/Ar Capacitively Coupled Plasma

In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) technology, one of the measurement and inspection (M...

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Bibliographic Details
Main Authors: Ji-Won Kwon, Sangwon Ryu, Jihoon Park, Haneul Lee, Yunchang Jang, Seolhye Park, Gon-Ho Kim
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Materials
Subjects:
virtual metrology
plasma information
etch profile
real-time etch depth
bowing CD
rectangular etch profile model
Online Access:https://www.mdpi.com/1996-1944/14/11/3005

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https://www.mdpi.com/1996-1944/14/11/3005

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